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The addition of these components will boost the performance of GaN power systems
Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC
This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEM…