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Vertikaler Pufferleckstrom in Durchlassrichtung, gemessen an 1200V GaN-on-QST® bei zwei verschiedenen Temperaturen: (links) 25°C und (rechts) 150°C. Der 1200V-Puffer von Imec zeigt einen vertikalen Leckstrom unter 1µA/mm2 bei 25°C und unter 10µA/mm2 bei 150°C bis zu 1200V mit einem Durchbruch von über 1800V sowohl bei 25°C als auch bei 150°C, was ihn für die Verarbeitung von 1200V-Bauteilen geeignet macht. / Vertical forward buffer leakage current measured on 1200V GaN-on-QST® at two different temperatures: (left) 25°C and (right) 150°C. Imec’s 1200V buffer shows vertical leakage current below 1µA/mm2 at 25°C and below 10µA/mm2 at 150°C up to 1200V with a breakdown in excess of 1800V both at 25°C and 150°C, which makes it suitable for the processing of 1200V devices.

This breakthrough result paves the way for GaN to enter into the SiC high voltage domain

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and AIXTRON, the leading provider of deposition equipment for compound semiconductor materials, have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1200V applications on…

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