![Prozessquerschnitte der auf 200 mm GaN-auf-SOI-Substraten hergestellten Hochspannungsbauelemente (a) e-mode pGaN-HEMT, (b) d-mode MIS-HEMT, (c) Schottky-Barrier-Diode. Alle Bauelemente enthalten metallische Feldplatten, die auf Front-End- und Interconnect-Metallschichten basieren und durch dielektrische Schichten getrennt sind. / Process cross-sections of the high-voltage components fabricated on 200 mm GaN-on SOI substrates (a) e-mode pGaN-HEMT (b) d-mode MIS-HEMT, (c) Schottky barrier diode. All devices include metal field plates based on front-end and interconnect metal layers and separated by dielectric layers. Prozessquerschnitte der auf 200 mm GaN-auf-SOI-Substraten hergestellten Hochspannungsbauelemente (a) e-mode pGaN-HEMT, (b) d-mode MIS-HEMT, (c) Schottky-Barrier-Diode. Alle Bauelemente enthalten metallische Feldplatten, die auf Front-End- und Interconnect-Metallschichten basieren und durch dielektrische Schichten getrennt sind. / Process cross-sections of the high-voltage components fabricated on 200 mm GaN-on SOI substrates (a) e-mode pGaN-HEMT (b) d-mode MIS-HEMT, (c) Schottky barrier diode. All devices include metal field plates based on front-end and interconnect metal layers and separated by dielectric layers.](/uploads/images/_scale/imecganic_169_626x352.jpg)
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The addition of these components will boost the performance of GaN power systems
Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC
This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEM…