![Abbildung 1 - Gemessener und vorhergesagter Wärmewiderstand in Abhängigkeit von der Lamellenbreite von GaN-on-Si-HEMTs mit zwei Lamellen. / Figure 1 - Measured and predicted thermal resistance vs. finger width of two-finger GaN-on-Si HEMTs. Abbildung 1 - Gemessener und vorhergesagter Wärmewiderstand in Abhängigkeit von der Lamellenbreite von GaN-on-Si-HEMTs mit zwei Lamellen. / Figure 1 - Measured and predicted thermal resistance vs. finger width of two-finger GaN-on-Si HEMTs.](/uploads/images/_scale/imecfigure1measuredthermalresistance_169_626x352.jpg)
![Abbildung 2 - Geometrie des in der 3D-Simulation verwendeten InP-Nanoridge-HBT. / Figure 2 – Geometry of the InP nanoridge HBT used in the 3D simulation. Abbildung 2 - Geometrie des in der 3D-Simulation verwendeten InP-Nanoridge-HBT. / Figure 2 – Geometry of the InP nanoridge HBT used in the 3D simulation.](/uploads/images/_scale/imecfigure2geometryinpnanoridge_169_626x352.jpg)
![Abbildung 3 - Auswirkungen von nicht-diffusiven thermischen Transporteffekten (wie in der Monte-Carlo-Simulation von imec erfasst) in InP-Nanoridge-HBTs. / Figure 3 – Impact of non-diffusive thermal transport effects (as captured by imec’s Monte Carlo simulation) in InP nanoridge HBTs. Abbildung 3 - Auswirkungen von nicht-diffusiven thermischen Transporteffekten (wie in der Monte-Carlo-Simulation von imec erfasst) in InP-Nanoridge-HBTs. / Figure 3 – Impact of non-diffusive thermal transport effects (as captured by imec’s Monte Carlo simulation) in InP nanoridge HBTs.](/uploads/images/_scale/imecfigure3impactofnondiffusivethermaltransport_169_626x352.jpg)
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Imec introduces simulation framework to better predict thermal transport in RF devices for 5G and 6G.
This week, at the 2022 International Electron Devices Meeting (IEEE IEDM 2022), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a Monte Carlo Boltzmann modeling framework that uses microscopic heat carrier distributions to predict 3D thermal tr…