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Ein Diced-GaN-Wafer, ähnlich dem, was die Gewinner mit imec herstellen werden können. / A diced GaN wafer, similar to what winners will be able to produce with imec.
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Contest aims to stimulate innovation in power electronics, leveraging GaN technology to create higher power, smaller and faster components that increase devices’ power density

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Imec, the world-leading research and innovation center in nanoelectronics and digital technologies, and EUROPRACTICE announced today the winners of their 2021 GaN-IC design contest. The contest aims to encourage innovation in power electronics applications using imec’s Gallium Nitride technology f…
Ein Demonstrationsmuster des von imec entwickelten Atemtestgeräts. (Bild: imec)
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Imec schließt Lizenzvertrag mit miDiagnostics über die Vermarktung seiner patentierten Technologie zur schnellen und zuverlässigen COVID-19-Diagnose anhand der Atemluft ab

Imec, weltweit führendes Forschungs- und Innovationszentrum für Nanoelektronik und Digitaltechnik, und miDiagnostics, ein Spin-off von imec in einem Kooperationsverbund mit der Johns Hopkins University, das sich auf die Entwicklung von Point-of-Care-Tests für das Screening, die Diagnose und die Å
Vertikaler Pufferleckstrom in Durchlassrichtung, gemessen an 1200V GaN-on-QST® bei zwei verschiedenen Temperaturen: (links) 25°C und (rechts) 150°C. Der 1200V-Puffer von Imec zeigt einen vertikalen Leckstrom unter 1µA/mm2 bei 25°C und unter 10µA/mm2 bei 150°C bis zu 1200V mit einem Durchbruch von über 1800V sowohl bei 25°C als auch bei 150°C, was ihn für die Verarbeitung von 1200V-Bauteilen geeignet macht. / Vertical forward buffer leakage current measured on 1200V GaN-on-QST® at two different temperatures: (left) 25°C and (right) 150°C. Imec’s 1200V buffer shows vertical leakage current below 1µA/mm2 at 25°C and below 10µA/mm2 at 150°C up to 1200V with a breakdown in excess of 1800V both at 25°C and 150°C, which makes it suitable for the processing of 1200V devices.

This breakthrough result paves the way for GaN to enter into the SiC high voltage domain

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and AIXTRON, the leading provider of deposition equipment for compound semiconductor materials, have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1200V applications on…
The Neuropixels 2.0 probe (bottom) is smaller than the first generation (top) and can monitor neural activity over weeks.

A new generation of miniature recording probes can track the same neurons inside tiny mouse brains over weeks — and even months

Latest Neuropixels probes can track neurons over weeks

The new tools build on the success of the original Neuropixels probes released in 2017 and currently used in more than 400 labs. Neuropixels 2.0 are much smaller — about a third the size of their predecessors. They’re designed to record the electrical activity from more individual neurons and ha…
28nm Pitch Single-Exposure-Strukturierung mit dem MOx-Prozess von Inpria auf einem 0,33NA EUV-Vollfeldscanner nach Ru-Metallisierung. / 28nm pitch single-exposure patterning using Inpria’s MOx process on a 0.33NA EUV full field scanner after Ru metallization. 24nm Pitch-Linien/Abstände, erzielt auf einem 0,33NA NXE:3400B Vollfeldscanner, (links) nach dem Entwickeln und (rechts) nach dem Ätzen auf der kritischen Zielgröße (CD) (uLER = unbiased line-edge roughness). / 24nm pitch line/spaces obtained on a 0.33NA NXE:3400B full field scanner, (left) after developing and (right) after etching on target critical dimension (CD) (uLER = unbiased line-edge roughness). 28nm Kontaktlöcher, erzielt mit einem 0,33NA NXE:3400 Vollfeldscanner, nach dem Entwickeln. / 28nm contact holes obtained on a 0.33NA NXE:3400 full field scanner, after developing.

Proven correlation between morphological and electrical data on 28nm pitch line/spaces increases understanding of stochastic defectivity impact on device reliability/yield

Imec Pushes Single-Exposure Patterning Capability of 0.33NA EUVL to its Extreme Limits

This week, at the 2021 SPIE Advanced Lithography Conference, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and ASML, the world’s leading manufacturer of semiconductor lithography equipment, present several papers that demonstrate the ultimate single…
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