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All publications from IMEC Belgium

EnergyVille 2 Forschungsgebäude in Genk / EnergyVille 2 research building in Genk Huw Hampson Jones (Solithor) and -Olivier Rousseaux (imec)
  • Batterie

Breakthrough approach to solid-state batteries will break the barriers for the electrification of transport

Imec spin-off SOLiTHOR closes a €10M seed investment round to develop a new disruptive solid-state battery cell technology

SOLiTHOR , the newly created spin-off company from imec – partner in the top European energy R&D innovation hub Energyville – is spearheading the development, manufacturing and commercialisation of innovative solid-state lithium (Li) battery cell technology to reliably and economically offer…

Der neue Impulsradio-Ultrabreitband-Senderchip von Imec ermöglicht Datenübertragungsraten von bis zu 1,66 Gb/s für In-Body- und Kurzstrecken-Anwendungen. / Imec’s new impulse-radio ultra-wideband transmitter chip accommodates data transfer rates up to 1.66Gb/s for in-body and short-range applications.
  • Trade fair

ISSCC ’22 contribution confirms that UWB technology is capable of supporting low-power, high-bitrate applications – from smart glasses delivering tomorrow’s AR/VR experiences, to wireless telemetry modules for intracortical sensing.

Imec Pioneers Ultra-Wideband Transmitter Chip That Pushes Data Rates up to 1.66Gb/s with Milliwatt Power

At this week’s International Solid-State Circuits Conference (ISSCC), imec – a world-leading research and innovation hub in nanoelectronics and digital technologies – presents a new impulse-radio ultra-wideband (IR-UWB) transmitter chip that could redefine the future of UWB technology.

Fabricated in 28n…

Prozessquerschnitte der auf 200 mm GaN-auf-SOI-Substraten hergestellten Hochspannungsbauelemente (a) e-mode pGaN-HEMT, (b) d-mode MIS-HEMT, (c) Schottky-Barrier-Diode. Alle Bauelemente enthalten metallische Feldplatten, die auf Front-End- und Interconnect-Metallschichten basieren und durch dielektrische Schichten getrennt sind. / Process cross-sections of the high-voltage components fabricated on 200 mm GaN-on SOI substrates (a) e-mode pGaN-HEMT (b) d-mode MIS-HEMT, (c) Schottky barrier diode. All devices include metal field plates based on front-end and interconnect metal layers and separated by dielectric layers.
  • Science

The addition of these components will boost the performance of GaN power systems

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEM…

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Ecolab PMS Buchta HJM